SIHB33N60ET5-GE3
Manufacturer Product Number:

SIHB33N60ET5-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIHB33N60ET5-GE3-DG

Description:

MOSFET N-CH 600V 33A TO263
Detailed Description:
N-Channel 600 V 33A (Tc) 278W (Tc) Surface Mount TO-263 (D2PAK)

Inventory:

12786892
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

SIHB33N60ET5-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
E
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
99mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3508 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
278W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SIHB33

Datasheet & Documents

Datasheets

Additional Information

Standard Package
800

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
FCB110N65F
MANUFACTURER
onsemi
QUANTITY AVAILABLE
4800
DiGi PART NUMBER
FCB110N65F-DG
UNIT PRICE
3.05
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
Related Products
vishay-siliconix

SUP90N06-6M0P-E3

MOSFET N-CH 60V 90A TO220AB

vishay-siliconix

SUB75P03-07-E3

MOSFET P-CH 30V 75A TO263

vishay-siliconix

SUD50P06-15-GE3

MOSFET P-CH 60V 50A TO252

vishay-siliconix

SIHA15N50E-E3

MOSFET N-CH 500V 14.5A TO220