Manufacturer Product Number:
SIHG125N60EF-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SIHG125N60EF-GE3-DG
Description:
MOSFET N-CH 600V 25A TO247AC
Detailed Description:
N-Channel 600 V 25A (Tc) 179W (Tc) Through Hole TO-247AC
Inventory:
12939807
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
SIHG125N60EF-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tube
Series
EF
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
125mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
47 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1533 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
179W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AC
Package / Case
TO-247-3
Base Product Number
SIHG125
Datasheet & Documents
Datasheets
Additional Information
Other Names
742-SIHG125N60EF-GE3
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
C3M0015065D
SICFET N-CH 650V 120A TO247-3
NDCTR40120A
MOSFET N-CH 1200V 40A SMD
NTMFS6H852NLT1G
MOSFET N-CH 80V 11A/42A 5DFN