Manufacturer Product Number:
SIHJ7N65E-T1-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SIHJ7N65E-T1-GE3-DG
Description:
MOSFET N-CH 650V 7.9A PPAK SO-8
Detailed Description:
N-Channel 650 V 7.9A (Tc) 96W (Tc) Surface Mount PowerPAK® SO-8
Inventory:
12921164
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SIHJ7N65E-T1-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
7.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
598mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
820 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
96W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SIHJ7
Datasheet & Documents
Datasheets
Additional Information
Other Names
SIHJ7N65E-T1-GE3CT
SIHJ7N65E-T1-GE3TR
SIHJ7N65E-T1-GE3DKR
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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