SIHP105N60EF-GE3
Manufacturer Product Number:

SIHP105N60EF-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIHP105N60EF-GE3-DG

Description:

MOSFET N-CH 600V 29A TO220AB
Detailed Description:
N-Channel 600 V 29A (Tc) 208W (Tc) Through Hole TO-220AB

Inventory:

RFQ Online
12918191
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SIHP105N60EF-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tube
Series
EF
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
102mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
53 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1804 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SIHP105

Datasheet & Documents

Datasheets
SIHP105N60EF-GE3

Additional Information

Standard Package
50

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
SIHG105N60EF-GE3
MANUFACTURER
Vishay Siliconix
QUANTITY AVAILABLE
463
DiGi PART NUMBER
SIHG105N60EF-GE3-DG
UNIT PRICE
1.84
SUBSTITUTE TYPE
Parametric Equivalent
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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