Manufacturer Product Number:
SIHP12N65E-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SIHP12N65E-GE3-DG
Description:
MOSFET N-CH 650V 12A TO220AB
Detailed Description:
N-Channel 650 V 12A (Tc) 156W (Tc) Through Hole TO-220AB
Inventory:
12918221
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SIHP12N65E-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1224 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SIHP12
Datasheet & Documents
Datasheets
Additional Information
Other Names
SIHP12N65E-GE3CT-DG
SIHP12N65E-GE3CT
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IPP60R380E6XKSA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
0
DiGi PART NUMBER
IPP60R380E6XKSA1-DG
UNIT PRICE
1.13
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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