SIS606BDN-T1-GE3
Manufacturer Product Number:

SIS606BDN-T1-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIS606BDN-T1-GE3-DG

Description:

MOSFET N-CH 100V 9.4A/35.3A PPAK
Detailed Description:
N-Channel 100 V 9.4A (Ta), 35.3A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Inventory:

12000 Pcs New Original In Stock
12787380
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SIS606BDN-T1-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen IV
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
9.4A (Ta), 35.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
17.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1470 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3.7W (Ta), 52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Base Product Number
SIS606

Datasheet & Documents

Datasheets
SIS606BDN-T1-GE3

Additional Information

Other Names
SIS606BDN-T1-GE3CT
SIS606BDN-T1-GE3TR
SIS606BDN-T1-GE3DKR
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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