Manufacturer Product Number:
SISH112DN-T1-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SISH112DN-T1-GE3-DG
Description:
MOSFET N-CH 30V 11.3A PPAK
Detailed Description:
N-Channel 30 V 11.3A (Tc) 1.5W (Tc) Surface Mount PowerPAK® 1212-8SH
Inventory:
5870 Pcs New Original In Stock
12785972
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SISH112DN-T1-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7.5mOhm @ 17.8A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
2610 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.5W (Tc)
Operating Temperature
-50°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8SH
Package / Case
PowerPAK® 1212-8SH
Base Product Number
SISH112
Datasheet & Documents
Datasheets
Additional Information
Other Names
SISH112DN-T1-GE3-DG
742-SISH112DN-T1-GE3TR
SISH112DN-T1-GE3CT
SISH112DN-T1-GE3DKR-DG
SISH112DN-T1-GE3TR
742-SISH112DN-T1-GE3CT
742-SISH112DN-T1-GE3DKR
SISH112DN-T1-GE3CT-DG
SISH112DN-T1-GE3DKR
SISH112DN-T1-GE3TR-DG
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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