Manufacturer Product Number:
SISH410DN-T1-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SISH410DN-T1-GE3-DG
Description:
MOSFET N-CH 20V 22A/35A PPAK
Detailed Description:
N-Channel 20 V 22A (Ta), 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
Inventory:
2190 Pcs New Original In Stock
12917570
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
SISH410DN-T1-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
22A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8SH
Package / Case
PowerPAK® 1212-8SH
Base Product Number
SISH410
Datasheet & Documents
Datasheets
Additional Information
Other Names
SISH410DN-T1-GE3TR
SISH410DN-T1-GE3CT
SISH410DN-T1-GE3DKR
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
SUP85N03-3M6P-GE3
MOSFET N-CH 30V 85A TO220AB
SIHF6N65E-GE3
MOSFET N-CH 650V 7A TO220
SIE812DF-T1-GE3
MOSFET N-CH 40V 60A 10POLARPAK
