SISS76LDN-T1-GE3
Manufacturer Product Number:

SISS76LDN-T1-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SISS76LDN-T1-GE3-DG

Description:

MOSFET N-CH 70V 19.6A/67.4A PPAK
Detailed Description:
N-Channel 70 V 19.6A (Ta), 67.4A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8SH

Inventory:

12945157
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

SISS76LDN-T1-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen IV
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
70 V
Current - Continuous Drain (Id) @ 25°C
19.6A (Ta), 67.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
3.3V, 4.5V
Rds On (Max) @ Id, Vgs
6.25mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id
1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33.5 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
2780 pF @ 35 V
FET Feature
-
Power Dissipation (Max)
4.8W (Ta), 57W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8SH
Package / Case
PowerPAK® 1212-8SH
Base Product Number
SISS76

Datasheet & Documents

Additional Information

Other Names
742-SISS76LDN-T1-GE3DKR
742-SISS76LDN-T1-GE3CT
742-SISS76LDN-T1-GE3TR
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
vishay-siliconix

SIHB11N80AE-GE3

MOSFET N-CH 800V 8A D2PAK

vishay-siliconix

SIR826LDP-T1-RE3

MOSFET N-CH 80V 21.3A/86A PPAK

vishay-siliconix

SQ2318BES-T1_GE3

MOSFET N-CH 40V 8A SOT23-3

vishay-siliconix

SIDR626LDP-T1-RE3

MOSFET N-CH 60V 45.6A/2.4A PPAK