SQW61N65EF-GE3
Manufacturer Product Number:

SQW61N65EF-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SQW61N65EF-GE3-DG

Description:

MOSFET N-CH 650V 62A TO247AD
Detailed Description:
N-Channel 650 V 62A (Tc) 625W (Tc) Through Hole TO-247AD

Inventory:

327 Pcs New Original In Stock
12948270
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SQW61N65EF-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tube
Series
E
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
62A (Tc)
Rds On (Max) @ Id, Vgs
52mOhm @ 32A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
344 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
7379 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
625W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-247AD
Package / Case
TO-247-3
Base Product Number
SQW61

Datasheet & Documents

Datasheets

Additional Information

Other Names
742-SQW61N65EF-GE3
Standard Package
30

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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