Manufacturer Product Number:
SI3812DV-T1-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SI3812DV-T1-GE3-DG
Description:
MOSFET N-CH 20V 2A 6TSOP
Detailed Description:
N-Channel 20 V 2A (Ta) 830mW (Ta) Surface Mount 6-TSOP
Inventory:
13060452
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SI3812DV-T1-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
-
Series
LITTLE FOOT®
Packaging
Tape & Reel (TR)
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id
600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
4 nC @ 4.5 V
Vgs (Max)
±12V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
830mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SOT-23-6 Thin, TSOT-23-6
Base Product Number
SI3812
Additional Information
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
DIGI Certification
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