Manufacturer Product Number:
SI4190BDY-T1-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SI4190BDY-T1-GE3-DG
Description:
N-CHANNEL 100 V (D-S) MOSFET SO-
Detailed Description:
N-Channel 100 V 12A (Ta), 17A (Tc) 3.8W (Ta), 8.4W (Tc) Surface Mount 8-SOIC
Inventory:
8858 Pcs New Original In Stock
13374259
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SI4190BDY-T1-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Packaging
Tape & Reel (TR)
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta), 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4150 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 8.4W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
SI4190
Datasheet & Documents
Datasheets
Additional Information
Other Names
742-SI4190BDY-T1-GE3CT
742-SI4190BDY-T1-GE3DKR
742-SI4190BDY-T1-GE3TR
Standard Package
2,500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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