Manufacturer Product Number:
SI7100DN-T1-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SI7100DN-T1-GE3-DG
Description:
MOSFET N-CH 8V 35A PPAK 1212-8
Detailed Description:
N-Channel 8 V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Inventory:
13058669
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SI7100DN-T1-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
-
Series
TrenchFET®
Packaging
Tape & Reel (TR)
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
8 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
3.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 8 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
3810 pF @ 4 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 52W (Tc)
Operating Temperature
-50°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Base Product Number
SI7100
Datasheet & Documents
Datasheets
Additional Information
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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