SIHF35N60E-GE3
Manufacturer Product Number:

SIHF35N60E-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIHF35N60E-GE3-DG

Description:

MOSFET N-CHANNEL 600V 32A TO220
Detailed Description:
N-Channel 600 V 32A (Tc) 39W (Tc) Through Hole TO-220 Full Pack

Inventory:

13006350
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

SIHF35N60E-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tube
Series
E
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
94mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
132 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2760 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
39W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220 Full Pack
Package / Case
TO-220-3 Full Pack
Base Product Number
SIHF35

Datasheet & Documents

Datasheets

Alternative Models

PART NUMBER
STF43N60DM2
MANUFACTURER
STMicroelectronics
QUANTITY AVAILABLE
911
DiGi PART NUMBER
STF43N60DM2-DG
UNIT PRICE
2.82
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
Related Products
vishay

SIHB6N80E-GE3

MOSFET N-CH 800V 5.4A D2PAK

vishay

SQJ488EP-T1_GE3

MOSFET N-CH 100V 42A PPAK SO-8

vishay

SIR124DP-T1-RE3

MOSFET N-CH 80V 16.1A/56.8A PPAK

vishay

SQP120N10-3M8_GE3

MOSFET N-CH 100V 120A TO220AB