Manufacturer Product Number:
FQAF16N50
Product Overview
Manufacturer:
Fairchild Semiconductor
DiGi Electronics Part Number:
FQAF16N50-DG
Description:
POWER FIELD-EFFECT TRANSISTOR, 1
Detailed Description:
N-Channel 500 V 11.3A (Tc) 110W (Tc) Through Hole TO-3PF
Inventory:
8060 Pcs New Original In Stock
12978209
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FQAF16N50 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
QFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
320mOhm @ 5.65A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PF
Package / Case
TO-3P-3 Full Pack
Datasheet & Documents
Datasheets
Additional Information
Other Names
ONSFSCFQAF16N50
2156-FQAF16N50
Standard Package
108
Environmental & Export Classification
ECCN
EAR99
HTSUS
8542.39.0001
DIGI Certification
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