Manufacturer Product Number:
630AT
Product Overview
Manufacturer:
Goford Semiconductor
DiGi Electronics Part Number:
630AT-DG
Description:
N200V,RD(MAX)<250M@10V,RD(MAX)<3
Detailed Description:
N-Channel 200 V 9A (Tc) 83W (Tc) Through Hole TO-220
Inventory:
87 Pcs New Original In Stock
13001168
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630AT Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Packaging
Tube
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
250mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11.8 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
509 pF @ 25 V
FET Feature
Standard
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Datasheet & Documents
Datasheets
Additional Information
Other Names
3141-630AT
4822-630AT
Standard Package
100
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
630AT
MANUFACTURER
Goford Semiconductor
QUANTITY AVAILABLE
87
DiGi PART NUMBER
630AT-DG
UNIT PRICE
0.30
SUBSTITUTE TYPE
Parametric Equivalent
DIGI Certification
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