Manufacturer Product Number:
NTBG1000N170M1
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
NTBG1000N170M1-DG
Description:
SILICON CARBIDE (SIC) MOSFET EL
Detailed Description:
N-Channel 1700 V 4.3A (Tc) 51W (Tc) Surface Mount D2PAK-7
Inventory:
736 Pcs New Original In Stock
13255983
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NTBG1000N170M1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
1.43Ohm @ 2A, 20V
Vgs(th) (Max) @ Id
4.3V @ 640µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 20 V
Vgs (Max)
+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
51W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Datasheet & Documents
Datasheets
Additional Information
Other Names
488-NTBG1000N170M1TR
488-NTBG1000N170M1DKR
488-NTBG1000N170M1CT
Standard Package
800
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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