RS1E350BNTB1
Manufacturer Product Number:

RS1E350BNTB1

Product Overview

Manufacturer:

Rohm Semiconductor

DiGi Electronics Part Number:

RS1E350BNTB1-DG

Description:

NCH 30V 80A POWER MOSFET: RS1E35
Detailed Description:
N-Channel 30 V 35A (Ta), 80A (Tc) 3W (Ta), 35W (Tc) Surface Mount 8-HSOP

Inventory:

2425 Pcs New Original In Stock
12976072
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RS1E350BNTB1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
35A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
185 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7900 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3W (Ta), 35W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-HSOP
Package / Case
8-PowerTDFN
Base Product Number
RS1E

Datasheet & Documents

Datasheets

Additional Information

Other Names
846-RS1E350BNTB1CT
846-RS1E350BNTB1DKR
846-RS1E350BNTB1TR
Standard Package
2,500

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
RS1E350BNTB
MANUFACTURER
Rohm Semiconductor
QUANTITY AVAILABLE
810
DiGi PART NUMBER
RS1E350BNTB-DG
UNIT PRICE
0.65
SUBSTITUTE TYPE
Parametric Equivalent
PART NUMBER
RS1E350BNTB1
MANUFACTURER
Rohm Semiconductor
QUANTITY AVAILABLE
2425
DiGi PART NUMBER
RS1E350BNTB1-DG
UNIT PRICE
1.19
SUBSTITUTE TYPE
Parametric Equivalent
DIGI Certification
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