SCT3080ALGC11
Manufacturer Product Number:

SCT3080ALGC11

Product Overview

Manufacturer:

Rohm Semiconductor

DiGi Electronics Part Number:

SCT3080ALGC11-DG

Description:

SICFET N-CH 650V 30A TO247N
Detailed Description:
N-Channel 650 V 30A (Tc) 134W (Tc) Through Hole TO-247N

Inventory:

1587 Pcs New Original In Stock
13524212
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SCT3080ALGC11 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
104mOhm @ 10A, 18V
Vgs(th) (Max) @ Id
5.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 18 V
Vgs (Max)
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
571 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
134W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247N
Package / Case
TO-247-3
Base Product Number
SCT3080

Datasheet & Documents

Reliability Documents
MOS-3GTHD Reliability Test
Design Resources
TO-247N Inner Structure
Datasheets
SCT3080ALGC11 TO-247N Taping Spec

Additional Information

Standard Package
30

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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