TSM60NB380CH
Manufacturer Product Number:

TSM60NB380CH

Product Overview

Manufacturer:

Taiwan Semiconductor Corporation

DiGi Electronics Part Number:

TSM60NB380CH-DG

Description:

600V, 9.5A, SINGLE N-CHANNEL POW
Detailed Description:
N-Channel 600 V 9.5A (Tc) 83W (Tc) Through Hole TO-251 (IPAK)

Inventory:

13374190
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

TSM60NB380CH Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Taiwan Semiconductor
Packaging
Tube
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 2.85A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19.4 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
795 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251 (IPAK)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
TSM60

Additional Information

Other Names
1801-TSM60NB380CH
Standard Package
15,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
taiwan-semiconductor

TSM60NB1R4CH

600V, 3A, SINGLE N-CHANNEL POWER

vishay

SI4190BDY-T1-GE3

N-CHANNEL 100 V (D-S) MOSFET SO-

vishay

SIRS4301DP-T1-GE3

P-CHANNEL 30 V (D-S) MOSFET POWE

vishay

SISS4402DN-T1-GE3

N-CHANNEL 40 V (D-S) MOSFET POWE