Manufacturer Product Number:
IRFBE30LPBF
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
IRFBE30LPBF-DG
Description:
MOSFET N-CH 800V 4.1A I2PAK
Detailed Description:
N-Channel 800 V 4.1A (Tc) 125W (Tc) Through Hole I2PAK
Inventory:
990 Pcs New Original In Stock
12858042
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IRFBE30LPBF Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IRFBE30
Datasheet & Documents
Datasheets
Additional Information
Other Names
2266-IRFBE30LPBF
*IRFBE30LPBF
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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