SIRS4302DP-T1-GE3
Manufacturer Product Number:

SIRS4302DP-T1-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIRS4302DP-T1-GE3-DG

Description:

N-CHANNEL 30 V (D-S) MOSFET POWE
Detailed Description:
N-Channel 30 V 87A (Ta), 478A (Tc) 6.9W (Ta), 208W (Tc) Surface Mount PowerPAK® SO-8

Inventory:

11964 Pcs New Original In Stock
13374108
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SIRS4302DP-T1-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Packaging
Tape & Reel (TR)
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
87A (Ta), 478A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
0.57mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
230 nC @ 10 V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
10150 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
6.9W (Ta), 208W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SIRS4302

Datasheet & Documents

Datasheets

Additional Information

Other Names
742-SIRS4302DP-T1-GE3TR
742-SIRS4302DP-T1-GE3CT
742-SIRS4302DP-T1-GE3DKR
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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